Electrophoretic Prepared ZnGa[sub 2]O[sub 4] Phosphor Film for FED

Abstract

In this study, the low voltage ZnGa2O4 phosphor film for field emission display (FED) is prepared by electrophoresis. The influence of the deposition parameters, such as deposition time, deposition voltage, electrode distance, and stirring speed on the electrophoresis and luminescence of phosphor film are investigated. The optimal deposition parameters for electrode distance, stirring speed, electrode bias, and deposition time are 20 mm, 450 rpm, 50 V, and 40 s, respectively. The optimum phosphor film thickness is 8-10 mum. For improving the crystallization and luminescence of the as-deposited phosphor film, it is annealed in various atmospheres. A luminance of 2080 cd/m(2) is obtained when phosphor film is annealed in 25% O-2 /Ar atmosphere and measured at an electron-gun voltage of 5 kV and an anode current of 30 Angstrom. The luminance efficiency of phosphor films prepared by electrophoresis is about 15 times higher than that prepared by the sedimentation method. (C) 2003 The Electrochemical Society.