Effect of Etching Gas on Adhesion between Mold Resin and Sputtered Stainless Steel Ground Films in Electromagnetic Shield Packages

Abstract

Demand has been growing for a process to form electromagnetic shielding films on the mold resin surface of semiconductor packages to reduce electromagnetic interference noise, and sputter deposition, which is a stable process, is increasingly used to form shielding films. However, there has been little discussion of the adhesion mechanism between the mold resin covering the semiconductor device and the sputtered stainless steel. In this study, a Cu/stainless steel film was sputter-deposited on two types of mold resin containing different amounts of SiO2 filler after etching with different flow ratios of Ar and N2, and the adhesion strength and interface conditions were analyzed by XPS. Increasing the SiO2 filler exposure on the mold resin surface and the amount of nitrogen derived from the amino group at the interface increased the adhesion strength between the mold resin and sputtered stainless steel.