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Extraction and estimation of pinned photodiode capacitance in CMOS image sensors

IEEE Journal of the Electron Devices Society (2014) 2(4) 59-64
DOI: 10.1109/JEDS.2014.2318060
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Abstract

The pinned photodiode capacitance extraction method proposed by Goiffon et al. is discussed, and two additional new methods are presented and analyzed; one based on the full well dependence on photon flux and the other based on the full well dependence on transfer-gate off-voltage.

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Chao, C. Y. P., Chen, Y. C., Chou, K. Y., Sze, J. J., Hsueh, F. L., & Wuu, S. G. (2014). Extraction and estimation of pinned photodiode capacitance in CMOS image sensors. IEEE Journal of the Electron Devices Society, 2(4), 59–64. https://doi.org/10.1109/JEDS.2014.2318060

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