Abstract
We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices. © The Author(s) 2011.
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CITATION STYLE
Savel’ev, S. E., Alexandrov, A. S., Bratkovsky, A. M., & Williams, R. S. (2011). Molecular dynamics simulations of oxide memristors: Thermal effects. Applied Physics A: Materials Science and Processing, 102(4), 891–895. https://doi.org/10.1007/s00339-011-6293-4
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