Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes

Abstract

The noise performance of three types of n+/p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD_DG), and a field poly gate connected to the n+ cathode (SPAD_FG). The measurement results of dark count rate and afterpulsing showed that the SPAD_DG had better noise performance compared to the SPAD_NG. This is because the dummy poly gate pushed the shallow trench isolation away from the active region of the SPAD, thus reducing the dark noise generated from the Si-SiO2 interface. The measurement results also revealed that the noise performance can be further improved by connecting the poly gate to the n+ cathode. The voltage on the poly gate in SPAD_FG reduced the electric field in the n-well guard ring (GR) region, thus reducing the carriers from the GR region that can enter the active region of SPADs and initiate dark counts.