High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Abstract

Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency tandem solar cells with three or more junctions. Copyright © 2016 John Wiley & Sons, Ltd.