Growth and experimental evidences for doped nanofilms by X-ray photoemission spectroscopy data analyses

Abstract

By using the molecular beam epitaxy growth technique, the impacts of growth temperatures for Bi2Te3 thin films were investigated, besides of the substrate temperatures on growth. Moreover, the full width half maximums, based on the X-ray photoemission spectroscopy measurements, have been shown clear results for Cr-Te bonds in chromium doped Bi2Te3 thin films. The current aim is a spotlight on enlightening how chromium is joined within Bi2Te3 epitaxial thin films in the process of doping concentration by providing detailed experimental evidences through the systematic structure and electronic investigations of the compound.