Investigation on the corrosive effect of NH 3 during InGaN/GaN multi-quantum well growth in light emitting diodes

Abstract

Three series of samples with different NH 3 flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH 3 may also play a negative effect on indium incorporation during InGaN growth. Especially, when temperature is relatively high, the hydrogen generated from the dissociation of NH 3 may suppress the chemical reaction which produces InN, leading to a reduced indium incorporation efficiency during the InGaN layer growth.