Abstract
A new family of heterostructured transition-metal dichalcogenides (TMDCs) with incommensurate ("misfit") spatial arrangements of well-defined layers was prepared from structurally dissimilar single-phase 2H-MoS2 and 1T-HfS2 materials. The experimentally observed heterostructuring is energetically favorable over the formation of homogeneous multi-principle element dichalcogenides observed in related dichalcogenide systems of Mo, W, and Ta. The resulting three-dimensional (3D) heterostructures show semiconducting behavior with an indirect band gap around 1 eV, agreeing with values predicted from density functional theory. Results of this joint experimental and theoretical study open new avenues for generating unexplored metal-dichalcogenide heteroassemblies with incommensurate structures and tunable physical properties. This journal is
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CITATION STYLE
Hlova, I. Z., Singh, P., Malynych, S. Z., Gamernyk, R. V., Dolotko, O., Pecharsky, V. K., … Balema, V. P. (2021). Incommensurate transition-metal dichalcogenides: Via mechanochemical reshuffling of binary precursors. Nanoscale Advances, 3(14), 4065–4071. https://doi.org/10.1039/d1na00064k
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