Calculation of semiconductor power losses of a three-phase quasi-Z-source inverter

Abstract

This paper presents two novel algorithms for the calculation of semiconductor losses of a three-phase quasi-Z-source inverter (qZSI). The conduction and switching losses are calculated based on the output current-voltage characteristics and switching characteristics, respectively, which are provided by the semiconductor device manufacturer. The considered inverter has been operated in a stand-alone operation mode, whereby the sinusoidal pulse width modulation (SPWM) with injected 3rd harmonic has been implemented. The proposed algorithms calculate the losses of the insulated gate bipolar transistors (IGBTs) and the free-wheeling diodes in the inverter bridge, as well as the losses of the impedance network diode. The first considered algorithm requires the mean value of the inverter input voltage, the mean value of the impedance network inductor current, the peak value of the phase current, the modulation index, the duty cycle, and the phase angle between the fundamental output phase current and voltage. Its implementation is feasible only for the Z-source-related topologies with the SPWM. The second considered algorithm requires the instantaneous values of the inverter input voltage, the impedance network diode current, the impedance network inductor current, the phase current, and the duty cycle. However, it does not impose any limitations regarding the inverter topology or switching modulation strategy. The semiconductor losses calculated by the proposed algorithms were compared with the experimentally determined losses. Based on the comparison, the correction factor for the IGBT switching energies was determined so the errors of both the algorithms were reduced to less than 12%.