Ultra-thin and flat mica as gate dielectric layers

Abstract

Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.