Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN

Abstract

Time-resolved photoluminescence (PL) spectroscopy has been employed to investigate the emission characteristics of oxygen-related defects in AlN in the temperature region from 77 to 500 K. Two PL components with different decay constants are observed in the near-ultraviolet to visible regions. One is the PL component with decay time of <10 ns and its peak position shifts to longer wavelengths from ∼350 to ∼500 nm with increasing temperature up to 500 K. This PL component is attributed to the radiative relaxation of photoexcited electrons from the band-edge states to the ground state of the oxygen-related emission centers. In the time region from tens to hundreds of nanoseconds, the second PL component emerges in the wavelength region from 300 to 400 nm. The spectral shape and the decay profiles are hardly dependent on temperature. This temperature-independent PL component most likely results from the transfer of photoexcited electrons from the band-edge states to the localized excited state of the oxygen-related emission centers. These results provide a detailed insight into the radiative relaxation processes of the oxygen-related defect centers in AlN immediately after the photoexcitation process.