A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS2

11Citations
Citations of this article
8Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS2 was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS2 based photodetector increase from 0.1722 A W-1 and 1014.65 Jones to 0.2907 A W-1 and 1014.84 Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS2 has been obtained. The criterion for the CVD-grown 2D MoS2 to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS2 has been proposed. The CVD-grown 2D MoS2 and the annealed CVD-grown 2D MoS2 are oxygen-doped MoS2 while the vulcanized CVD-grown 2D MoS2 is pure MoS2. The variation in the photoelectric performance of CVD-grown 2D MoS2 results from differences in the O-doping concentration and the bandgap. This journal is

Cite

CITATION STYLE

APA

Jian, J., Chang, H., Dong, P., Bai, Z., & Zuo, K. (2021). A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS2. RSC Advances, 11(9), 5204–5217. https://doi.org/10.1039/d0ra10302k

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free