Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs

Abstract

The influence of the recovery characteristics on the switching behavior of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with rated voltage and current of 1200 V and 50 A, respectively, at different switching speeds was investigated. A comparative analysis of the devices with different recovery characteristics revealed an increase in the turn-on loss (Eon) owing to the higher output capacitance charge (Qoss) and reverse recovery charge (Qrr) in the recovery arm. On the other hand, a higher Qoss in the recovery arm resulted in a lower turn-off loss (Eoff). In addition, an increase in Qoss and Qrr further influenced Eon and Eoff at a higher switching speed. Furthermore, a higher Qrr observed at a higher switching speed indicated a more significant impact of Qrr on Eon at a high switching speed than that of Qoss. The findings clarified in this study highlight the necessity of focusing the recovery characteristics to ensure a desirable switching loss of SiC MOSFETs.