MORPHOLOGICAL AND CHEMICAL CONSIDERATIONS FOR THE EPITAXY OF METALS ON SEMICONDUCTORS.

Abstract

This article reviews epitaxial parameters and growth modes in relation to semiconductors. Both substrate orientation and for the binary semiconductors, stoichiometry of the substrate influence epitaxial relationships. Representative examples of different growth modes are discussed in relation to interfacial bonding, with emphasis on differences between Al and Ag on GaAs. The article discusses some outstanding issues in epitaxy and approaches to their solution.