Visible-to-near-infrared organic photodiodes with performance comparable to commercial silicon-based detectors

Abstract

Photodetection in the visible and near-infrared (NIR) spectral regions offers a wide range of applications, such as image arrays of high pixel density and artificial intelligence. In this work, broadband organic photodiodes (OPDs) are developed with performance comparable to that of crystalline silicon-based commercial devices. Through the strategy of combining an NIR-absorbing non-fullerene acceptor and a thick junction, the resulting devices show significantly improved performance parameters, with a suppressed dark current density of 0.35 nA/cm2, an enhanced spectral response covering 300-1000 nm, and external quantum efficiency over 60% el/ph. Owing to the low dark current noise and high responsivity to NIR wavelengths, an unexpectedly high specific detectivity of 5.1 × 1013 Jones at 930 nm is obtained together with a linear dynamic range of 157 dB and a -3 dB cutoff frequency of 4.5 kHz. These results reveal that the NIR OPD has great potential for 2D and 3D imaging applications with a high frame rate and multiple band selection.