Silicon nanowire structures as high-sensitive pH-sensors

Abstract

Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by "top-down" approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of "one-dimensional" silicon nanostructure have bigger pH-sensitivity as compared with "two- dimensional" structure. Integrated element formed from two p- and n-type nanowire ISFET ("inverter") can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.