Complementary spin transistor using a quantum well channel

11Citations
Citations of this article
19Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

Cite

CITATION STYLE

APA

Park, Y. H., Choi, J. W., Kim, H. J., Chang, J., Han, S. H., Choi, H. J., & Koo, H. C. (2017). Complementary spin transistor using a quantum well channel. Scientific Reports, 7. https://doi.org/10.1038/srep46671

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free