Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers

Abstract

We have shown experimentally that in GaInNAsSb/GaAs quantum-well lasers there are significant nonradiative contributions to threshold current from the barriers and the well. By matching a simulation to the experiment we find that Auger recombination in the barriers is very weak, due to the low carrier density. Shockley-Read-Hall recombination is the dominant source of nonradiative current, with the barriers making the major contribution, possibly due to their higher defect density than the wells. This suggests that significant improvements could be made by optimizing growth conditions and layer design, with particular attention to the barrier. © 2009 American Institute of Physics.