The annealing mechanism of the radiation-induced vacancy-oxygen defect in silicon

Abstract

Annealing experiments on the VO defect (the A-centre) produced by radiation in silicon-reported long ago-have been re-examined in order to deduce the two most important properties of VO: its diffusivity and the equilibrium constant for VO dissociation into V + O. The loss rate of VO is accounted for by two major reactions. One is the conventional reaction of the trapping of mobile VO by oxygen, thus producing VO 2. The other is an annihilation of vacancies, which coexist in an equilibrium ratio with VO, by radiation-produced interstitial point defects. In some cases, a minor reaction, VO + V, should also be taken into account. The emerging minor defects V 2O are also highly mobile. They partially dissociate back and partially get trapped by oxygen producing stable V 2O 2 defects. © 2012 American Institute of Physics.