Abstract
Negative feedback applied to the back gate of MOS devices available in FD-SOI (fully depleted silicon on insulator) CMOS technologies can be used to improve the linearity of operational amplifiers. Two operational amplifiers designed and fabricated in a 22 nm FD-SOI technology illustrate this technique, as well as its advantages and limitations.
Author supplied keywords
Cite
CITATION STYLE
APA
Kuzmicz, W. (2021). Linearization technique of low power opamps in cmos fd-soi technologies. Electronics (Switzerland), 10(15). https://doi.org/10.3390/electronics10151800
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free