Linearization technique of low power opamps in cmos fd-soi technologies

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Abstract

Negative feedback applied to the back gate of MOS devices available in FD-SOI (fully depleted silicon on insulator) CMOS technologies can be used to improve the linearity of operational amplifiers. Two operational amplifiers designed and fabricated in a 22 nm FD-SOI technology illustrate this technique, as well as its advantages and limitations.

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APA

Kuzmicz, W. (2021). Linearization technique of low power opamps in cmos fd-soi technologies. Electronics (Switzerland), 10(15). https://doi.org/10.3390/electronics10151800

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