Low-temperature growth of epitaxial PZT/LSMO/LAO film by excimer laser-assisted metal organic deposition (ELAMOD)

Abstract

The preparation of the epitaxial Pb(Zr,Ti)O3:PZT film on SrTiO3: STO, LaAlO3: LAO, MgO and La0.7Sr 0.3MnO3: LSMO / LAO substrates using the excimer laser-assisted metal organic deposition (ELAMOD) process was investigated. When using the STO substrate, the epitaxial PZT film was obtained by the ArF laser irradiation at room temperature using the 2-step irradiation method. On the other hand, when using the LAO and MgO substrates, no single phase of the PZT film was obtained by the ArF laser irradiation at room temperature. The LSMO buffer layer was prepared on the LAO substrate by thermal MOD at 1000°C, and the PZT film was then prepared on the LSMO / LAO substrate by ELAMOD at room temperature. The effects of the laser fluence, shot number and buffer layer thickness on the PZT epitaxial growth were investigated. An epitaxial PZT / LSMO / LAO film was successfully obtained by ArF laser irradiation at 80mJ/cm 2 and room temperature. The formation mechanisms of the epitaxial PZT films by ELAMOD are also discussed. © 2007 IOP Publishing Ltd.