Comparison of Auger Coefficients in Type i and Type II Quantum Well Midwave Infrared Lasers

Abstract

We perform a detailed comparison of 2D Auger coefficients in narrow-gap type-I and type-II quantum wells (T1QWs and T2QWs), and the relative effects of Auger non-radiative decay on midwave infrared lasers employing both types of gain media. Comparison is also made to 3D Auger coefficients in bulk mid-IR materials, by defining a 'normalization length' that accounts for the spatial extent of the electron and hole wavefunctions in the quantum wells. The comparisons confirm that Auger recombination in both types of QW is substantially suppressed relative to bulk, due primarily to the effects of compressive strain on the valence subband dispersions. We find that the 2D Auger coefficients in T1QWs remain substantially lower than those in T2QWs out to wavelengths beyond $3.5~\mu \text{m}$. However, this does not necessarily imply a lower lasing threshold because a substantial fraction of the holes injected into T1QWs occupy lower subbands that do not contribute gain, so more must be injected to reach the lasing threshold. When all of the relevant considerations are combined, the thresholds for the best T1QW and T2QW lasers cross over near $\lambda ~\approx ~3.0~\mu \text{m}$. Other characteristics governing the relative T1QW and T2QW laser performances above threshold, such as maximum output power and wallplug efficiency, are also considered.