Fabrication of Multiple Wavelength Lasers in GaAs-AIGaAs Structures Using a One-Step Spatially Controlled Quantum-Well Intermixing Technique

Abstract

We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were fabricated using this technique. Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing. © 1995 IEEE. All rights reserved.