Light-activated electroactive molecule-based memory microcells confined on a silicon surface

Abstract

Ultrahigh-capacity molecular AND gates provide the potential for the next-generation dynamic random access memory. The ferrocene-terminated monolayer on oxide-free silicon system allows a highly stable and independent switching with both light and potential, yielding precisely such an AND gate (see picture). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.