Abstract
A Ti target was mounted on a planar magnetron and sputtered in a mixture of Ar and N2, resulting in a flux of metallic Ti particles forming a TiN film on a substrate. The sticking coefficient of Ti was determined by comparing the Ti flux towards the substrate with the actual amount of deposited Ti particles, as determined by Rutherford backscattering spectrometry. It was observed that the sticking coefficient of Ti increases significantly with increasing target-substrate distance, but is to a lesser extent influenced by the N2 partial pressure. © 2008 IOP Publishing Ltd.
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CITATION STYLE
Mahieu, S., Van Aeken, K., Depla, D., Smeets, D., & Vantomme, A. (2008). Dependence of the sticking coefficient of sputtered atoms on the target-substrate distance. Journal of Physics D: Applied Physics, 41(15). https://doi.org/10.1088/0022-3727/41/15/152005
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