Threading and basal dislocations were observed and their Burgers vectors (b→) were analyzed in 20 µm thick halide vapor phase homoepitaxially grown beta-gallium oxide (β−Ga 2 O 3 ) films using 15 keV monochromatic synchrotron X-ray topography with symmetric reflection (004) and two asymmetric reflections (205) and (115) in back-reflection and grazing incidence angle geometries, respectively. In a 1 × 1.5 cm 2 sample, threading screw dislocations with b→=001 were observed with a density of 30 cm −2 , whereas a single threading edge dislocation with b→=100 was observed. Basal dislocations with b→=12112 were observed with a density of ∼20 cm −2 , and a single basal dislocation with b→=010 was observed. Rocking curve mapping of the three reflections was also performed on the entire sample with the same setup and a high resolution x-ray camera to obtain the full width at half maximum (FWHM), strain, and curvature maps in two almost orthogonal directions. The epilayer demonstrated excellent crystalline quality with a median FWHM of 8.2 arc sec in the (004) reflection and a very low median strain of ∼|8 × 10 −5 | obtained from both sample directions. The median radius of curvature was ∼−100 m along the [100] direction and ∼280 m along the [010] sample axis, indicating very low lattice plane curvature that enables high manufacturability and reliability of devices.
CITATION STYLE
Mahadik, N. A., Tadjer, M. J., Bonanno, P. L., Hobart, K. D., Stahlbush, R. E., Anderson, T. J., & Kuramata, A. (2019). High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa 2 O 3 films using monochromatic synchrotron topography. APL Materials, 7(2). https://doi.org/10.1063/1.5051633
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