Abstract
We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 1012 cm-2, which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.
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Umezawa, T., Akahane, K., Yamamoto, N., Kanno, A., & Kawanishi, T. (2014). Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications. IEEE Journal of Selected Topics in Quantum Electronics, 20(6), 147–153. https://doi.org/10.1109/JSTQE.2014.2321288
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