Analog RF MEMS attenuator with PZT actuators

Abstract

This paper reports on a voltage controlled, analog RF MEMS attenuator with lead-zirconate-titanate (PZT) actuators. Fabrication utilizes a PZT on silicon-on-insulator (SOI) material stack. The RF MEMS device demonstrated attenuation of up to 26.0 dB at 2.0 GHz and 9.3 dB at 25.0 GHz. Bias voltage varied from 0.0 V to 14.5 V dc. At 0.0 V the minimum insertion loss ranged from fractions of a dB at low frequencies to 1.16 dB at 25 GHz. This device can be used as part of a beam forming network for phased antenna arrays. Example of an 8 element linear antenna array was considered for cos2 and Taylor (-20dB) excitation distributions.