Journal Article

Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process

  • Paramasivam P
  • Gowthaman N
  • Srivastava V
Recent Patents on Nanotechnology (2024) 19(2) 282-295
DOI: 10.2174/0118722105273476231201073651
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Paramasivam, P., Gowthaman, N., & Srivastava, V. M. (2024). Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process. Recent Patents on Nanotechnology, 19(2), 282–295. https://doi.org/10.2174/0118722105273476231201073651

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