Design and analysis of memristor memory cell using different windowing functions

Abstract

In recent years, rapid growth of battery operated devices has made the low power memory design a desire in the industry. As the number of transistor increases, the leakage current has made the SRAM unit a power hungry block from both the static and dynamic perspectives. Nowadays, the SRAM block is an important part in SOC design. For memory design, the power dissipation and area are the main factors. Alternative technologies are needed to meet recent challenges in memory design. Memory cell can be designed by using memristor whose memristance M is function of charge q in it. Memristor is passive non-linear device that controls the current and able to retain the charge in it. Hence, memristor is considered as resistor with nonlinear characteristics and memorizing feature. In this project Memristor and its performance is analysed by using two different window functions in MATLAB. Hysteresis curve is obtained for analysis. Memristor based memory cell is designed using memristor with proposed window function to analyse the performance using LT in 180nm technology. Peak and average power results are compared. It shows that 94% of power is reduced in the proposed memory cell.