Abstract
A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30 μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSbGaSb samples show 9.7 AW peak responsivity and a peak detectivity of 5.7× 1011 Jones with effective quantum efficiency of 33% at 36 μm and 4.9 K. The detector exhibits a 97 μm (∼3 THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications. © 2007 American Institute of Physics.
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CITATION STYLE
Jayaweera, P. V. V., Matsik, S. G., Perera, A. G. U., Paltiel, Y., Sher, A., Raizman, A., … Liu, H. C. (2007). GaSb homojunctions for far-infrared (terahertz) detection. Applied Physics Letters, 90(11). https://doi.org/10.1063/1.2713760
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