Investigation of InGaN-based red/green micro-light-emitting diodes

Abstract

We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98 × 98 µ m 2 to 17 × 17 µ m 2 . The average forward voltage at 10 A / c m 2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blueshift of the peak wavelength ( ∼ 35 n m ) and broader full-width at half maximum ( ≥ 50 n m ) at 2 − 50 A / c m 2 compared to green µLEDs. We demonstrated that 47 × 47 µ m 2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.