Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size

  • Kamboj V
  • Braeuninger-Weimer P
  • Kidambi P
  • et al.
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Abstract

© 2016 SPIE.We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ∼65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.

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Kamboj, V. S., Braeuninger-Weimer, P., Kidambi, P. R., Jessop, D. S., Singh, A., Sibik, J., … Ritchie, D. A. (2016). Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size. In Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX (Vol. 9747, p. 974707). SPIE. https://doi.org/10.1117/12.2209724

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