High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet

Abstract

An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco-friendly water-based metal salt solution as a precursor is presented. Through the use of APPJ indium-gallium-zinc-oxide (IGZO) film as the channel material and a high-k dielectric HfO2/ZrO2 gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO2/ZrO2/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low Vth of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm2/V-s and a large Ion/Ioff ratio of 7 × 108.