InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering

Abstract

The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 °C with arsenic (As+) and phosphorus (P+) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 7°. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750 °C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126 meV has been observed from the P+-implanted sample, whilst only ∼14 meV has been measured from the SixN y-capped sample after annealing at 750 °C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed. © 2005 Elsevier B.V. All rights reserved.