AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

Abstract

AlGaAs double-heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge-coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.