Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56 μm

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Abstract

The continuous-wave (cw) operation of GaInNAsSb lasers at 1560 nm is reported. Light-current measurements were made before and after a 100 h cw burn in at 20 °C, during which a 3×890 μ m2 device with 72 mA initial threshold current and 14 mW maximum output power experienced a 15% drop in peak output power. These preliminary lifetime results provide insight into the reliability of GaInNAsSb active regions and reinforce the promise of this material for C-band devices. High-resolution modal gain spectra were extracted from the amplified spontaneous emission spectra acquired after the burn in, providing reliable values for the internal loss, transparency current, and differential gain. © 2006 American Institute of Physics.

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Gupta, J. A., Barrios, P. J., Caballero, J. A., Poitras, D., Aers, G. C., Pakulski, G., & Wu, X. (2006). Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56 μm. Applied Physics Letters, 89(15). https://doi.org/10.1063/1.2361179

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