Abstract
We investigated the photoconductivity effect observed in a p-type SnTe quantum well in the temperature range of 1.9-100 K. The negative photoconductivity effect is observed for temperatures below 4 K, and it is strongly dependent on the light wavelength. A systematic analysis of the photoconductivity indicates that the origin of the negative photoconductivity is not related to the topological surface states but rather to the reduction of carrier mobility when the SnTe quantum well is illuminated with energies above 2 eV.
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CITATION STYLE
Lopes, G. R. F., de Castro, S., Kawata, B., Rappl, P. H. de O., Abramof, E., & Peres, M. L. (2021). Photoconductivity effect in SnTe quantum well. Applied Physics Letters, 119(3). https://doi.org/10.1063/5.0056230
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