Development of back and front contacts for CdTe layer in tandem flexible photoelectric converters on basis of CdTe/CuInSe2

Abstract

By the method of nonreactive high-frequency magnetron sputtering on Upilex polyimide films, transparent and conductive layers of ITO were obtained. These layers, after high-temperature annealing, at temperatures typical for the solar cell formation, had a resistance of 11 ohm/□ and a transmittance of up to 72%. The use of such an ITO layer with the addition of a 100 nm thick layer of undoped zinc oxide, as the front contact, and Cu/ITO composition, as the back contact, made it possible to obtain a flexible solar cell polyimide/ITO/CdS/CdTe/Cu/ITO with an efficiency of 10.4%. With a thickness of the base layer of cadmium telluride 2.5 μm, the average transmittance of the SC in the 850-1100 nm wavelength range is 46.8%. The developed design of a flexible solar cell based on cadmium telluride due to the use of a transparent back contact with a comb metal electrode is easily interfaced with existing designs of flexible solar cells based on copper and indium diselenide, which allow the formation of flexible tandem photoelectric converters CdTe/CuInSe2.