Abstract
Negative luminescence operation is reported for p-n diode devices with type-II InAs/InAsSb strained-layer-superlattice active regions which have a spectral peak at 4.2 μm and a negative luminescence efficiency of up to 20%. © 1999 American Institute of Physics.
Cite
CITATION STYLE
APA
Pullin, M. J., Hardaway, H. R., Heber, J. D., & Phillips, C. C. (1999). Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices. Applied Physics Letters, 75(22), 3437–3439. https://doi.org/10.1063/1.125288
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