TaSi2 nanowires: A potential field emitter and interconnect

Abstract

TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950°C in an ambient containing Ta vapor. The nanowires could be grown up to 13 μm in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/μm and the threshold field is down to 6 V/μm with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 × 10 8 A cm-2. In addition, effects of annealing temperatures and capability of metal suicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nanooptoelectronics. © 2006 American Chemical Society.