Recent Advances in Functionalizing Metal Oxide Semiconductors for Highly Sensitive Gas Sensors

Abstract

Metal oxide semiconductors (MOSs) have emerged as pivotal materials for gas sensing technologies due to their inherent advantages, including cost-effectiveness, simplicity in synthesis, and easy fabrication of sensing nanodevices. These characteristics have made MOSs widely applicable in industrial, environmental, and biological monitoring. While MOSs offer intrinsic gas-sensing properties, their limited active site density and function diversity restrict sensitivity and selectivity, especially in complex gaseous environments. To overcome these limitations, extensive research efforts have been devoted to functionalizing MOSs through strategies such as heterojunction construction, noble metal nanoparticle loading (e.g., Au, Pt, Ag, Pd), and heteroatom doping (e.g., Si, Cr). Furthermore, composite materials have emerged as an effective approach to enhance MOSs-based gas sensors by integrating carbon-based materials or polymers to leverage synergistic interactions. These modifications expand the applicability of MOSs sensors for detecting volatile organic compounds, toxic gases, and flammable gases. This review systematically examines the synthesis strategies and performance enhancements achieved through MOSs functionalization and composite material integration, emphasizing structure-property relationships, interfacial charge transfer dynamics, and adsorption mechanisms. Finally, the challenges and future directions for the rational design of next-generation MOSs-based gas sensors are outlined, providing critical insights for advancing intelligent gas sensing technologies.