Experimental proof-of-principle investigation of enhanced Z3DT in (001) oriented Si/Ge superlattices

Abstract

An experimental proof-of-principle of an enhanced Z3DT (thermoelectric figure of merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value of the experimental Z3DT at 300 K for a (001) oriented Si(20 Å)/Ge(20 Å) superlattice is 0.1 using κ = 5 Wm-1 K-1, for the in-plane thermal conductivity, which is a factor of seven enhancement relative to the estimated value of Z3DT=0.014 for bulk Si. The good agreement between experiment and theory validates our modeling approach (denoted as "carrier pocket engineering") to design superlattices with enhanced values of Z3D7. Proposals are made to enhance the experimental values of Z3DT for Si/Ge superlattices even further. © 2000 American Institute of Physics.