Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

Abstract

Resistive switching characteristics of Zr O2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ Zr O2 (with nc-Au embedded)/ n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in Zr O2 films can improve the device yield greatly. Zr O2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices. © 2007 American Institute of Physics.