ZnO thin films synthesis by RF magnetron sputtering deposition

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Abstract

Investigation of ZnO thin films synthesis using RF magnetron sputtering deposition in the Ar/O2 plasma gas mixture at different O2 composition and at different growth temperatures is presented. The effect growth process on structural (morphology and orientation films, grain sizes, lattice parameters) and optical (transmittance, absorption, refractive index, photoluminescence) properties are examined. It is shown that synthesized ZnO thin films at a temperature from 200 to 300 °C are polycrystal and textured. Notice that ZnO thin films, which are synthesized using pure Ar plasma gas, are porosity. The optical transmittance and absorption spectra have an absorption edge near 380 nm. The PL spectra of synthesized ZnO films show exciton peaks at 370-400 nm and the wide emission at the yellow and red spectral regions.

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Gridchin, V. O., Kotlyar, K. P., Vershinin, A. V., Kryzhanovskaya, N. V., Pirogov, E. V., Semenov, A. A., … Soshnikov, I. P. (2019). ZnO thin films synthesis by RF magnetron sputtering deposition. In Journal of Physics: Conference Series (Vol. 1410). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1410/1/012054

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