Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions

Abstract

The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 μm with 80 μm of power at 300 K and 200 mA average current. The laser displayed 3.86 μm emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K. © 1997 American Institute of Physics.