RF sputtered low-resistivity and high-transmittance indium gallium zinc oxide films for near-UV applications

Abstract

Indium gallium zinc oxide (IGZO) films were deposited on glass substrates by co-sputtering In2 Ga2 Zn O7 and In 2 O3 targets. The structural, electrical, and optical properties of the IGZO films are investigated as functions of substrate temperature and radio frequency (rf) power supplied to the In2 O 3 target (Prf, In2 O3). The X-ray diffraction patterns show that the deposited IGZO films are amorphous in nature. The IGZO films have the lowest resistivity of 7.16× 10-4 cm with an In content of 24.56 atom % at 175°C substrate temperature. The optical transmittance at 400 nm exceeds 80% for all samples. © 2010 The Electrochemical Society.