Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

Abstract

Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm-1 by Raman scattering measurements. Boron doping was performed during the growth of SiNWs. Fano [Phys. Rev. 124, 1866 (1961)] broadening was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs. Hydrogen (H) passivation of B acceptors in the SiNWs was also investigated. A broad peak was observed at around 650-680 cm-1 after hydrogenation, demonstrating that B dopants were passivated by the formation of the well-known H-B passivation centers. © 2006 American Institute of Physics.