Advancements in thin film thermoelectric: progress and perspective on materials and devices

Abstract

Thin film thermoelectric materials have garnered significant attention due to their potential for efficient energy conversion in various applications, ranging from waste heat recovery to wearable electronics to space exploration. This review paper provides a comprehensive overview of recent advancements in thin film thermoelectric materials and devices. The first discusses the fundamental principles governing thermoelectricity and the parameters influencing the thermoelectric performance, such as the Seebeck coefficient, electrical conductivity, and thermal conductivity. Then, it elucidates the unique properties of thin films that make them promising candidates for thermoelectric applications. It then highlights recent developments in novel thermoelectric materials, including conventional inorganic materials such as bismuth telluride, as well as emerging materials like lanthanum (III) telluride. The synthesis methods, including physical vapor deposition, chemical vapor deposition, and solution-based techniques, are further discussed along with their impacts on the structural and electrical properties of thin film thermoelectric materials. The review also highlights recent progress in the fabrication of device and their performances. Finally, future research directions and emerging trends in thin film thermoelectric are outlined to inspire further advancements in this rapidly evolving field.